收藏本站
NTB30N20
Power MOSFET
30 Amps, 200 Volts
N?Channel Enhancement?Mode D 2 PAK
Features
? Source?to?Drain Diode Recovery Time Comparable to a Discrete
http://onsemi.com
?
?
?
?
Fast Recovery Diode
Avalanche Energy Specified
I DSS and R DS(on) Specified at Elevated Temperature
Mounting Information Provided for the D 2 PAK Package
Pb?Free Packages are Available
V DSS
200 V
R DS(ON) TYP
68 m W @ V GS = 10 V
N?Channel
D
I D MAX
30 A
Typical Applications
? PWM Motor Controls
? Power Supplies
? Converters
G
S
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
Rating
Drain?to?Source Voltage
Drain?to?Source Voltage (R GS = 1.0 M W )
Symbol
V DSS
V DGR
Value
200
200
Unit
Vdc
Vdc
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
Gate?to?Source Voltage
? Continuous
? Non?Repetitive (t p v 10 ms)
V GS
V GSM
" 30
" 40
Vdc
1
2
4
30N20G
Drain Current ? Continuous @ T A 25 ° C
? Continuous @ T A 100 ° C
? Pulsed (Note 2)
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Total Power Dissipation @ T A = 25 ° C (Note 1)
I D
I D
I DM
P D
P D
30
22
90
214
1.43
2.0
Adc
W
W/ ° C
W
3
D 2 PAK
CASE 418B
STYLE 2
1
Gate
AYWW
2
Drain
3
Source
Operating and Storage Temperature Range
Single Drain?to?Source Avalanche Energy,
Starting T J = 25 ° C
(V DD = 100 Vdc, V GS = 10 Vdc,
I L (pk) = 20 A, L = 3.0 mH, R G = 25 W )
T J , T stg
E AS
?55 to
+175
450
° C
mJ
30N20
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb?Free Package
Thermal Resistance
° C/W
ORDERING INFORMATION
? Junction?to?Case
? Junction?to?Ambient
? Junction?to?Ambient (Note 1)
R q JC
R q JA
R q JA
0.7
62.5
50
Device
NTB30N20
Package
D 2 PAK
Shipping ?
50 Units/Rail
Maximum Lead Temperature for Soldering
T L
260
° C
NTB30N20G
D 2 PAK
50 Units/Rail
Purposes for 10 seconds
(Pb?Free)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
NTB30N20T4
NTB30N20T4G
D 2 PAK
D 2 PAK
(Pb?Free)
800 Tape & Reel
800 Tape & Reel
reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in 2 ).
2. Pulse Test: Pulse Width = 10 m s, Duty Cycle = 2%.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2005
August, 2005 ? Rev. 4
1
Publication Order Number:
NTB30N20/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTB35N15T4 MOSFET N-CH 150V 37A D2PAK
NTB52N10T4G MOSFET N-CH 100V 52A D2PAK
NTB5405NG MOSFET N-CH 40V 116A D2PAK
NTB5411NT4G MOSFET N-CH 60V 80A D2PAK
NTB5412NT4G MOSFET N-CH 60V 60A D2PAK
NTB5426NT4G MOSFET N-CH 60V 120A D2PAK
NTB5605T4G MOSFET P-CH 60V 18.5A D2PAK
NTB6410ANG MOSFET N-CH 100V 76A D2PAK
相关代理商/技术参数
NTB-3402 制造商:Quest Technology International Inc 功能描述:
NTB35N15 功能描述:MOSFET 150V 37A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB35N15G 功能描述:MOSFET 150V 37A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB35N15T4 功能描述:MOSFET 150V 37A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB35N15T4G 功能描述:MOSFET 150V 37A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTB-3602 制造商:Quest Technology International Inc 功能描述:
NTB40603AS 制造商:IKO NIPPON THOMPSON 功能描述:AXL NDL RLR 40MM
NTB4302 功能描述:MOSFET 30V 74A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube